Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage

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dc.authoridKocyigit, Serhat/0000-0003-0172-6180;
dc.contributor.authorCetinkaya, H. G.
dc.contributor.authorKaya, A.
dc.contributor.authorAltindal, S.
dc.contributor.authorKocyigit, S.
dc.date.accessioned2025-10-24T18:09:24Z
dc.date.available2025-10-24T18:09:24Z
dc.date.issued2015
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractElectrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures have been investigated using the admittance spectroscopy method in the temperature and voltage ranges of 160-300 K and -4-5 V, respectively. Experimental results show that both the main electrical and dielectric parameters, such as barrier height (Phi(b)), depletion layer width (W-d), series resistance (R-s) of structure, real and imaginary parts of dielectric constant (epsilon', epsilon '') and electric modulus (M' and M ''), tan delta, and AC conductivity (sigma(ac)) were found to be strong functions of temperature and applied bias voltage. M' and M '' versus V plots have a peak at about 1 V. While the peak position shifted towards negative biases, the magnitude of the peak decreases with increasing temperature. Such peak behavior in M' and M '' can be attributed to the existence of particular density distribution profile interface states at the interfacial layer-n-Si interface and their reordering and restructure under external electric field and interface polarization. These peaks also indicated that the Au/1% GP+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structure exhibits relaxation phenomena.
dc.identifier.doi10.1139/cjp-2014-0628
dc.identifier.endpage1220
dc.identifier.issn0008-4204
dc.identifier.issn1208-6045
dc.identifier.issue10
dc.identifier.scopus2-s2.0-84943183602
dc.identifier.scopusqualityQ3
dc.identifier.startpage1213
dc.identifier.urihttps://doi.org/10.1139/cjp-2014-0628
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3628
dc.identifier.volume93
dc.identifier.wosWOS:000362459300029
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherCanadian Science Publishing
dc.relation.ispartofCanadian Journal Of Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20251023
dc.subjectSchottky-Barrier Diodes; Dependent Series Resistance; Excess Capacitance; Solar-Cells; Thin-Films; Frequency; Conductivity; Bias; Behavior; Intimate
dc.titleElectrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage
dc.typeArticle

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