Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage
Küçük Resim Yok
Tarih
2015
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Canadian Science Publishing
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures have been investigated using the admittance spectroscopy method in the temperature and voltage ranges of 160-300 K and -4-5 V, respectively. Experimental results show that both the main electrical and dielectric parameters, such as barrier height (Phi(b)), depletion layer width (W-d), series resistance (R-s) of structure, real and imaginary parts of dielectric constant (epsilon', epsilon '') and electric modulus (M' and M ''), tan delta, and AC conductivity (sigma(ac)) were found to be strong functions of temperature and applied bias voltage. M' and M '' versus V plots have a peak at about 1 V. While the peak position shifted towards negative biases, the magnitude of the peak decreases with increasing temperature. Such peak behavior in M' and M '' can be attributed to the existence of particular density distribution profile interface states at the interfacial layer-n-Si interface and their reordering and restructure under external electric field and interface polarization. These peaks also indicated that the Au/1% GP+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structure exhibits relaxation phenomena.
Açıklama
Anahtar Kelimeler
Schottky-Barrier Diodes; Dependent Series Resistance; Excess Capacitance; Solar-Cells; Thin-Films; Frequency; Conductivity; Bias; Behavior; Intimate
Kaynak
Canadian Journal Of Physics
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
93
Sayı
10
