Investigation of structural, electrical and photoresponse properties of composite based Al/NiO:CdO/p-Si/Al photodiodes

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dc.authorid0000-0002-5304-0503en_US
dc.contributor.authorGürgenç, Ezgi
dc.contributor.authorDikici, Aydın
dc.contributor.authorAslan, Fehmi
dc.date.accessioned2022-07-01T12:48:08Z
dc.date.available2022-07-01T12:48:08Z
dc.date.issued2022en_US
dc.departmentMTÖ Üniversitesi, Yeşilyurt Meslek Yüksekokulu, Motorlu Araçlar ve Ulaştırma Teknolojileri Bölümüen_US
dc.descriptionEzgi Gürgenç, Energy Systems Engineering, Faculty of Technology, Firat University, Elazig, Turkey. Aydın Dikici, Energy Systems Engineering, Faculty of Technology, Firat University, Elazig, Turkey Fehmi Aslan, Rail Systems Machinery Technology, Yeşilyurt Vocational School, Turgut Özal University, Malatya, Turkeyen_US
dc.descriptionFormerly part of: Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Opticsen_US
dc.descriptionReceived 23 February 2022, Revised 31 March 2022, Accepted 29 April 2022, Available online 1 May 2022, Version of Record 12 May 2022.en_US
dc.description.abstractIn the present study, different molar ratios of (1:0, 0:1, 3:1, 1:1, and 1:3) NiO:CdO composite thin films were coated on p-Si by a dynamic sol-gel spin coating method. Structural characterizations of NiO:CdO thin films were performed by XRD, FE-SEM, and EDX analysis. The photoresponse and electrical behavior of the fabricated photodiodes were determined by current-voltage (I–V), transient photocurrent-time (I–t), capacitance-voltage (C–V), conductivity-voltage (G-V), and transient photocapacitance-time (C–t) measurements. All fabricated photodiodes were exhibited rectifying properties and the photocurrent values increased as the light intensity was increased. All photodiodes are sensitive to light and it was determined that the NiO photodiode exhibited the highest photosensitivity value. Photocapacitance and photoconductance values of photodiodes were affected by light. Photoresponse and electrical behavior were affected by the interface states and the NiO:CdO ratio. The results show that Al/NiO:CdO/p-Si/Al photodiodes can be used as photosensors or photocapacitors in optoelectronic applications.en_US
dc.identifier.citationGürgenç, E., Dikici, A., & Aslan, F. (2022). Investigation of structural, electrical and photoresponse properties of composite based Al/NiO: CdO/p-Si/Al photodiodes. Physica B: Condensed Matter, 639, 413981.en_US
dc.identifier.doi10.1016/j.physb.2022.413981
dc.identifier.endpage17en_US
dc.identifier.issn0921-4526en_US
dc.identifier.scopus2-s2.0-85129918264en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2022.413981
dc.identifier.urihttps://hdl.handle.net/20.500.12899/1150
dc.identifier.volume639en_US
dc.identifier.wosWOS:000800458300005en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorAslan, Fehmi
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B: Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectComposite photodiodeen_US
dc.subjectThin filmen_US
dc.subjectNanomaterialen_US
dc.subjectPhotoresponseen_US
dc.subjectSolar irradiationen_US
dc.titleInvestigation of structural, electrical and photoresponse properties of composite based Al/NiO:CdO/p-Si/Al photodiodesen_US
dc.typeArticleen_US

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