Long- range ordered vertical III- nitride nanocylinder arrays via plasma- assisted atomic layer deposition
| dc.authorid | BIYIKLI, Necmi/0000-0001-9387-5145|Haider, Ali/0000-0001-5978-3677|Yilmaz, Ibrahim/0000-0003-1503-4046|Elmabruk, Kholoud/0000-0002-8873-584X; | |
| dc.contributor.author | Haider, Ali | |
| dc.contributor.author | Deminskyi, Petro | |
| dc.contributor.author | Yilmaz, Mehmet | |
| dc.contributor.author | Elmabruk, Kholoud | |
| dc.contributor.author | Yilmaz, Ibrahim | |
| dc.contributor.author | Biyikli, Necmi | |
| dc.date.accessioned | 2025-10-24T18:09:12Z | |
| dc.date.available | 2025-10-24T18:09:12Z | |
| dc.date.issued | 2018 | |
| dc.department | Malatya Turgut Özal Üniversitesi | |
| dc.description.abstract | In this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays (HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated low-temperature plasma-assisted atomic layer deposition (PA-ALD). III-Nitride HNCs have been characterized for their structural, chemical, surface, and optical properties. The material properties of nanostructured III-nitride materials have been compared with the thin-film counterparts which were also grown using PA-ALD. Our results revealed that long-range ordered arrays of III nitride HNCs were successfully integrated on Si substrates and possess hexagonal polycrystalline wurtzite crystalline structure. Such long-range ordered wafer-scale III-nitride nanostructures might be potentially used in piezotronic sensing, energy harvesting, resistive memory, flexible and wearable electronics, III-nitride photovoltaics, and (photo)catalysis. | |
| dc.identifier.doi | 10.1039/c8tc01165f | |
| dc.identifier.endpage | 6482 | |
| dc.identifier.issn | 2050-7526 | |
| dc.identifier.issn | 2050-7534 | |
| dc.identifier.issue | 24 | |
| dc.identifier.scopus | 2-s2.0-85049155811 | |
| dc.identifier.scopusquality | Q1 | |
| dc.identifier.startpage | 6471 | |
| dc.identifier.uri | https://doi.org/10.1039/c8tc01165f | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12899/3517 | |
| dc.identifier.volume | 6 | |
| dc.identifier.wos | WOS:000436030200016 | |
| dc.identifier.wosquality | Q1 | |
| dc.indekslendigikaynak | Web of Science | |
| dc.indekslendigikaynak | Scopus | |
| dc.language.iso | en | |
| dc.publisher | Royal Soc Chemistry | |
| dc.relation.ispartof | Journal Of Materials Chemistry C | |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.snmz | KA_20251023 | |
| dc.subject | Aligned Inn Nanorods; Gan Nanowires; Thin-Films; High-Density; Growth; Epitaxy; Aln; Nanostructures; Nanoparticles; Fabrication | |
| dc.title | Long- range ordered vertical III- nitride nanocylinder arrays via plasma- assisted atomic layer deposition | |
| dc.title.alternative | Long-range ordered vertical III-nitride nano-cylinder arrays: Via plasma-assisted atomic layer deposition | |
| dc.type | Article |












