Long- range ordered vertical III- nitride nanocylinder arrays via plasma- assisted atomic layer deposition
Küçük Resim Yok
Tarih
2018
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Royal Soc Chemistry
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
In this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays (HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated low-temperature plasma-assisted atomic layer deposition (PA-ALD). III-Nitride HNCs have been characterized for their structural, chemical, surface, and optical properties. The material properties of nanostructured III-nitride materials have been compared with the thin-film counterparts which were also grown using PA-ALD. Our results revealed that long-range ordered arrays of III nitride HNCs were successfully integrated on Si substrates and possess hexagonal polycrystalline wurtzite crystalline structure. Such long-range ordered wafer-scale III-nitride nanostructures might be potentially used in piezotronic sensing, energy harvesting, resistive memory, flexible and wearable electronics, III-nitride photovoltaics, and (photo)catalysis.
Açıklama
Anahtar Kelimeler
Aligned Inn Nanorods; Gan Nanowires; Thin-Films; High-Density; Growth; Epitaxy; Aln; Nanostructures; Nanoparticles; Fabrication
Kaynak
Journal Of Materials Chemistry C
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
6
Sayı
24
