Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature

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dc.authoridTecimer, Huseyin/0000-0002-8211-8736;
dc.contributor.authorKaya, A.
dc.contributor.authorVural, O.
dc.contributor.authorTecimer, H.
dc.contributor.authorDemirezen, S.
dc.contributor.authorAltindal, S.
dc.date.accessioned2025-10-24T18:08:59Z
dc.date.available2025-10-24T18:08:59Z
dc.date.issued2014
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractAu/PVC + TCNQ/p-Si structure was fabricated and real and imaginary parts of the dielectric constant (epsilon', epsilon ''), loss tangent (tan delta), and the real and imaginary parts of the electric modulus (M', M '') and ac conductivity (sigma(ac)) of this structure have been investigated in wide frequency a range of 1 kHz-5 MHz at room temperature. All of these parameters were found strong function of frequency and voltage especially in the inversion and depletion regions at low frequencies due to interfacial polarization and charges at interface states (N-ss). The decrease in epsilon' and epsilon '' with increasing frequency indicated that the interfacial dipoles have less time to orient themselves in the direction of the alternate field. While the value of M' increase with increasing frequency and reach a maximum, M '' shows a peak and the peak position shifts to higher frequency with increasing applied voltage. The ln(sigma(ac)) vs ln(omega) plot of the structure for 0.5 V has three linear regions (I, II and III) with different slopes which correspond to low, intermediate and high frequency ranges, respectively. Such behavior of ln(sigma(ac)) vs ln(omega) plot indicated that there are three different conduction mechanisms in the Au/PVC + TCNQ/p-Si structure at room temperature. (C) 2013 Elsevier B. V. All rights reserved.
dc.identifier.doi10.1016/j.cap.2013.12.005
dc.identifier.endpage330
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.issue3
dc.identifier.scopus2-s2.0-84891794201
dc.identifier.scopusqualityQ2
dc.identifier.startpage322
dc.identifier.urihttps://doi.org/10.1016/j.cap.2013.12.005
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3392
dc.identifier.volume14
dc.identifier.wosWOS:000331640600019
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofCurrent Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20251023
dc.subjectAu/PVC plus TCNQ/p-Si structure; Frequency and voltage dependence; Dielectric properties and ac conductivity; Electric modulus
dc.titleFrequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature
dc.typeArticle

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