Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature
Küçük Resim Yok
Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Au/PVC + TCNQ/p-Si structure was fabricated and real and imaginary parts of the dielectric constant (epsilon', epsilon ''), loss tangent (tan delta), and the real and imaginary parts of the electric modulus (M', M '') and ac conductivity (sigma(ac)) of this structure have been investigated in wide frequency a range of 1 kHz-5 MHz at room temperature. All of these parameters were found strong function of frequency and voltage especially in the inversion and depletion regions at low frequencies due to interfacial polarization and charges at interface states (N-ss). The decrease in epsilon' and epsilon '' with increasing frequency indicated that the interfacial dipoles have less time to orient themselves in the direction of the alternate field. While the value of M' increase with increasing frequency and reach a maximum, M '' shows a peak and the peak position shifts to higher frequency with increasing applied voltage. The ln(sigma(ac)) vs ln(omega) plot of the structure for 0.5 V has three linear regions (I, II and III) with different slopes which correspond to low, intermediate and high frequency ranges, respectively. Such behavior of ln(sigma(ac)) vs ln(omega) plot indicated that there are three different conduction mechanisms in the Au/PVC + TCNQ/p-Si structure at room temperature. (C) 2013 Elsevier B. V. All rights reserved.
Açıklama
Anahtar Kelimeler
Au/PVC plus TCNQ/p-Si structure; Frequency and voltage dependence; Dielectric properties and ac conductivity; Electric modulus
Kaynak
Current Applied Physics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
14
Sayı
3
