The effect of different frequencies and illuminations on the electrical behavior of MoO3/Si heterojunctions

Basit Öğe Kaydı
dc.authorid0000-0003-0607-648Xen_US
dc.contributor.authorÇaldıran, Zakir
dc.contributor.authorTaşyürek, Lütfi Bilal
dc.contributor.authorNuhoğlu, Yasin
dc.date.accessioned2021-11-16T12:21:32Z
dc.date.available2021-11-16T12:21:32Z
dc.date.issued2021en_US
dc.departmentMTÖ Üniversitesi, Darende Meslek Yüksekokulu, Tıbbi Hizmetler ve Teknikler Bölümüen_US
dc.description.abstractIn this study, the rectifier properties of the transition metal oxide group n-type semiconductor molybdenum trioxide (MoO3) were investigated. The MoO3 material is a suitable material for the heterojunction structures with AFM, SEM, XRD, and 3D optical profilometer such as structural and morphological characterization result showed. Current–voltage (I-V), capacitance–voltage (C-V), and conductance-voltage (G-V) measurements of Cr/MoO3/n-Si and Cr/MoO3/p-Si heterojunction devices were made in dark and different illuminations at 300 K. The basic diode parameters were determined by using Thermionic emission (TE), and Cheung and Norde method from the I-V characteristics of the devices in dark conditions. The ideality factors of Cr/MoO3/n-Si and Cr/MoO3/p-Si devices were calculated as 1.25 and 1.22, respectively, and barrier heights of 0.69 and 0.71 eV of the devices were calculated by TE method. These results showed that the MoO3/Si heterojunction has rectifier properties. The high values of ideality can be attributed to the inhomogeneities at the interface and the series resistance. In addition, the photoconductivity properties were examined of the devices at 50 and 100 mW/cm2 illuminations. From the experimental results obtained, it was concluded that the devices can be used as photodiodes as well as showing good rectifier properties.en_US
dc.identifier.citationÇaldıran, Z., Taşyürek, L. B., & Nuhoğlu, Y. (2021). The effect of different frequencies and illuminations on the electrical behavior of MoO3/Si heterojunctions. Journal of Materials Science: Materials in Electronics, 32, (23), 27950 - 27961en_US
dc.identifier.doi10.1007/s10854-021-07176-8
dc.identifier.endpage27961en_US
dc.identifier.issn0957-4522en_US
dc.identifier.issn1573-482Xen_US
dc.identifier.issue23en_US
dc.identifier.scopus2-s2.0-85116977354en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage27950en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-021-07176-8
dc.identifier.urihttps://hdl.handle.net/20.500.12899/468
dc.identifier.volume32en_US
dc.identifier.wosWOS:000706584800002en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorÇaldıran, Zakir
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science: Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleThe effect of different frequencies and illuminations on the electrical behavior of MoO3/Si heterojunctionsen_US
dc.typeArticleen_US

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