The effect of different frequencies and illuminations on the electrical behavior of MoO3/Si heterojunctions
Yükleniyor...
Tarih
2021
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this study, the rectifier properties of the transition metal oxide group n-type semiconductor molybdenum trioxide (MoO3) were investigated. The MoO3 material is a suitable material for the heterojunction structures with AFM, SEM, XRD, and 3D optical profilometer such as structural and morphological characterization result showed. Current–voltage (I-V), capacitance–voltage (C-V), and conductance-voltage (G-V) measurements of Cr/MoO3/n-Si and Cr/MoO3/p-Si heterojunction devices were made in dark and different illuminations at 300 K. The basic diode parameters were determined by using Thermionic emission (TE), and Cheung and Norde method from the I-V characteristics of the devices in dark conditions. The ideality factors of Cr/MoO3/n-Si and Cr/MoO3/p-Si devices were calculated as 1.25 and 1.22, respectively, and barrier heights of 0.69 and 0.71 eV of the devices were calculated by TE method. These results showed that the MoO3/Si heterojunction has rectifier properties. The high values of ideality can be attributed to the inhomogeneities at the interface and the series resistance. In addition, the photoconductivity properties were examined of the devices at 50 and 100 mW/cm2 illuminations. From the experimental results obtained, it was concluded that the devices can be used as photodiodes as well as showing good rectifier properties.
Açıklama
Anahtar Kelimeler
Kaynak
Journal of Materials Science: Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
32
Sayı
23
Künye
Çaldıran, Z., Taşyürek, L. B., & Nuhoğlu, Y. (2021). The effect of different frequencies and illuminations on the electrical behavior of MoO3/Si heterojunctions. Journal of Materials Science: Materials in Electronics, 32, (23), 27950 - 27961
