A comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layer

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dc.authoridTecimer, Huseyin/0000-0002-8211-8736;
dc.contributor.authorKaya, A.
dc.contributor.authorYucedag, I.
dc.contributor.authorTecimer, H.
dc.contributor.authorAltindal, S.
dc.date.accessioned2025-10-24T18:09:06Z
dc.date.available2025-10-24T18:09:06Z
dc.date.issued2014
dc.departmentMalatya Turgut Özal Üniversitesi
dc.descriptionInternational Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEY
dc.description.abstractIn this study, Al/p-Si structures with undoped and Co-doped PVA interfacial layer called S-1 and S-2 were fabricated and their both electrical and dielectric properties were compared by using 300 kHz capacitance voltage (C-V) and conductance voltage (G/omega-V) measurements at room temperature. Experimental results show that both C and G or dielectric constant (epsilon'), dielectric loss (epsilon '') values were found as strongly function of applied bias voltage especially at inverse and accumulation bias regions. It was found that the value of R-5 considerably decreases with doping Co metal contrary to conductivity especially in the forward bias region. Such behavior can be attributed to the lack of free charges in pure PVA. The imaginary parr of dielectric modulus (M '') gives Two peaks for S-1 corresponding To enough reverse and forward biases and passes from a minimum at about zero bias. Also, it is clear That the minimum of The M '' for S-2 coincides with The maximum of The for S-1 at zero bias. As a result, Co-doped PVA considerable improved The performance of structure. In addition, loss Tangent. (tan delta), ac conductivity (sigma(ac)) and real part. of The electric modulus (M') were obtained and compared each other. (C) 2014 Elsevier Ltd. All rights reserved,
dc.identifier.doi10.1016/j.mssp.2014.03.015
dc.identifier.endpage30
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-84911406285
dc.identifier.scopusqualityQ1
dc.identifier.startpage26
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2014.03.015
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3471
dc.identifier.volume28
dc.identifier.wosWOS:000345645000005
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science In Semiconductor Processing
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20251023
dc.subjectComparing Al/PVA/p-Si and AhCo-PVA/p-Si structures; Electric and dielectric properties; Voltage dependent; Electric modulus; Ac conductivity
dc.titleA comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layer
dc.typeConference Object

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