On the Anomalous Peak in the Forward Bias Capacitance and Dielectric Properties of the Al/Co-Doped (PVC plus TCNQ)/p-Si structures as Function of Temperature

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dc.contributor.authorYucedag, I.
dc.contributor.authorKaya, A.
dc.contributor.authorAltindal, S.
dc.date.accessioned2025-10-24T18:09:29Z
dc.date.available2025-10-24T18:09:29Z
dc.date.issued2015
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractThe temperature and voltage dependence of electric and dielectric characteristics and ac electrical conductivity (sigma(ac)) of Al/Co-doped (PVC + TCNQ)/p-Si structure in the temperature range of 200-360 K and voltage range of (-4 V)-(9 V) have been investigated in detail by using experimental C-V and G/omega -V measurements at 500 kHz. The value of dielectric constant (epsilon'), dielectric loss (epsilon ''), dielectric loss tangent (tan delta), the real and imaginary parts of electric modulus (M' and M ''), and the sigma(ac) were strongly dependent applied bias voltage and temperature, especially in the depletion and accumulation regions. Such a behavior in these parameters can be explained on restructuring and reordering of charges at interface traps/states. The forward C-V plots exhibit an anomalous peak for each temperature and the peak position shift towards lower voltages with increasing temperature due to the particular density distribution of interface traps (D-it) and series resistance (Rs) of structure. Therefore the plots of dielectric properties and also sigma(ac) indicate two different behaviors before and after intersection point. Before this intersection point, while the values of the epsilon', epsilon '', and sigma(ac) increase, the tan delta decreases, after this intersection point, while the value of the epsilon', epsilon '', and sigma(ac) decrease, the tan delta increases. The ln (sigma(ac))-q/kT plot shows two linear regions both for the 2 V and 9 V which are corresponding to below room temperature (200-300 K) and above room temperature (320-360 K) and the corresponding activation energy (E-a) values were called as Ea((I)) and Ea((II)), respectively. Thus the E-a values were obtained from the slope of these Arrhenius plot as 182 meV and 4.7 meV for 2 V and 22 meV and 0.6 meV for 9 V, respectively.
dc.identifier.doi10.1166/jno.2015.1722
dc.identifier.endpage178
dc.identifier.issn1555-130X
dc.identifier.issn1555-1318
dc.identifier.issue2
dc.identifier.scopus2-s2.0-84931026689
dc.identifier.scopusqualityN/A
dc.identifier.startpage173
dc.identifier.urihttps://doi.org/10.1166/jno.2015.1722
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3672
dc.identifier.volume10
dc.identifier.wosWOS:000357170600002
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Scientific Publishers
dc.relation.ispartofJournal Of Nanoelectronics And Optoelectronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20251023
dc.subjectAl/Co-Doped (PVC plus TCNQ)/p-Si Structures; Dielectric Properties and Ac Conductivity; Temperature and Voltage Dependence; Anomalous Peak in the Forward Bias Capacitance; Arrhenius Plot
dc.titleOn the Anomalous Peak in the Forward Bias Capacitance and Dielectric Properties of the Al/Co-Doped (PVC plus TCNQ)/p-Si structures as Function of Temperature
dc.title.alternativeOn the anomalous peak in the forward bias capacitance and dielectric properties of the Al/Co-doped (PVC + TCNQ)/p-Si structures as function of temperature
dc.typeArticle

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