Illumination and Voltage Dependence of Electrical Characteristics of Au/0.03 Graphene-Doped PVA/n-Si Structures via Capacitance/Conductance-Voltage Measurements

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dc.contributor.authorSahar, Alialy
dc.contributor.authorAhmet, Kaya
dc.contributor.authorUslu, I.
dc.contributor.authorSemsettin, Altindal
dc.date.accessioned2025-10-24T18:09:15Z
dc.date.available2025-10-24T18:09:15Z
dc.date.issued2015
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractAu/n-Si (MS) structures with a high dielectric interlayer (0.03 graphene-doped PVA) are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage (C - V)and conductance-voltage (G/omega-V) measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms (N-D), barrier height (Phi(B)(C - V)), depletion layer width (W-D) and series resistance (R-s) show fairly large illumination dispersion. The voltage-dependent profile of surface states (N-ss) and resistance of the structure (R-i) are also obtained by using the dark-illumination capacitance (C-dark - C-ill) and Nicollian-Brews methods, respectively. For a clear observation of changes in electrical parameters with illumination, the values of N-D, W-D, Phi(B)(C - V) and R-s are drawn as a function of illumination intensity. The values of N-D and W-D change almost linearly with illumination intensity. On the other hand, R-s decreases almost exponentially with increasing illumination intensity whereas Phi(B)(C - V) increases. The experimental results suggest that the use of a high dielectric interlayer (0.03 graphene-doped PVA) considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications.
dc.identifier.doi10.1088/0256-307X/32/11/116102
dc.identifier.issn0256-307X
dc.identifier.issn1741-3540
dc.identifier.issue11
dc.identifier.scopus2-s2.0-84948442341
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1088/0256-307X/32/11/116102
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3549
dc.identifier.volume32
dc.identifier.wosWOS:000365178900023
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofChinese Physics Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20251023
dc.subjectSchottky-Barrier Diodes; Dielectric-Properties; Interfacial Layer; Fabrication
dc.titleIllumination and Voltage Dependence of Electrical Characteristics of Au/0.03 Graphene-Doped PVA/n-Si Structures via Capacitance/Conductance-Voltage Measurements
dc.typeArticle

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