Temperature dependent electronic transport properties of heterojunctions formed between perovskite SrTiO3 nanocubes and silicon

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dc.authorid0000-0003-0607-648Xen_US
dc.contributor.authorTaşyürek, Lütfi Bilal
dc.contributor.authorAydoğan, Şakir
dc.contributor.authorSevim, Melike
dc.contributor.authorÇaldıran, Zakir
dc.date.accessioned2021-09-10T07:49:15Z
dc.date.available2021-09-10T07:49:15Z
dc.date.issued2020en_US
dc.departmentMTÖ Üniversitesi, Darende Meslek Yüksekokulu, Tıbbi Hizmetler ve Teknikler Bölümüen_US
dc.description.abstractIn this study, synthesized strontium titanate (SrTiO3) nanocubes were coated on n-Si semiconductor by spin coating to obtain a heterojunction device. Transmission electron microscopy image, scanning electron microscope image and x-ray diffraction patterns of thin film of SrTiO3 nanocubes coated on Si surface were taken for structural and morphological characterization of the material. The basic device parameters such as ideality factor (n) and barrier height (?b) values of the reference Ni/Si/Al metal–semiconductor diode and of the Ni/SrTiO3/n-Si/Al heterojunction devices were calculated with the thermionic emission (TE) theory. The n and ?b values of the reference Ni/n-Si/Al device were calculated as 1.93 and 0.60 eV, respectively at room temperature. On the other hand, lower n and higher ?b values of Ni/SrTiO3/n-Si/Al heterojunction device were calculated as 1.34 and 0.63 eV, respectively. With these results, the current–voltage (I–V) measurements of the heterojunction device in the 80–400 K range were taken and the n, ?b, series resistance (Rs) values were calculated depending on the temperature by using different methods such as TE, Cheung and Norde functions. It was observed that while the temperature values decreased, n and Rs values of the device increase and ?b value decreases. The results obtained showed that the charge transport system is compatible with TE. The device parameters calculated from the Cheung and Norde methods also showed similar changes depending on the temperature. However, since the calculation method is different according to the TE method, different values were obtained in the device parameters. In addition, the curve ?b and (1/n)?1 against (1/2kT) was observed in accordance with the double Gauss distribution of the barrier heights. It was seen that the reverse bias I–V characteristics of the Ni/SrTiO3/n-Si/Al can be used in thermal sensors applications.en_US
dc.identifier.citationTaşyürek, L. B., Aydoğan, Ş., Sevim, M., & Çaldıran, Z. (2020). Temperature dependent electronic transport properties of heterojunctions formed between perovskite SrTiO 3 nanocubes and silicon. Journal of Materials Science: Materials in Electronics, 31(23), 20833-20846.en_US
dc.identifier.doi10.1007/s10854-020-04597-9
dc.identifier.endpage20846en_US
dc.identifier.issue23en_US
dc.identifier.scopus2-s2.0-85097499840en_US
dc.identifier.startpage20833en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-04597-9
dc.identifier.urihttps://hdl.handle.net/20.500.12899/403
dc.identifier.volume31en_US
dc.identifier.wosWOS:000579612000009en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.institutionauthorTaşyürek, Lütfi Bilal
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science: Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleTemperature dependent electronic transport properties of heterojunctions formed between perovskite SrTiO3 nanocubes and siliconen_US
dc.typeArticleen_US

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