Temperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC plus TCNQ/p-Si structures

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dc.authoridTecimer, Huseyin/0000-0002-8211-8736
dc.contributor.authorYucedag, I.
dc.contributor.authorKaya, A.
dc.contributor.authorTecimer, H.
dc.contributor.authorAltindal, S.
dc.date.accessioned2025-10-24T18:09:06Z
dc.date.available2025-10-24T18:09:06Z
dc.date.issued2014
dc.departmentMalatya Turgut Özal Üniversitesi
dc.descriptionInternational Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEY
dc.description.abstractDielectric properties and ac conductivity (sigma(ac)) of Au/PVC+TCNQ/p-Si structures have been investigated in the wide temperature range of 80-420 K using capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at 1 MlHz. It has been found that the forward bias C-V plots exhibit a distinct peak especially at a high temperature. Effects of the series resistance (R-s), interfacial PVC+TCNQ layer and the density distribution of interfaces'traps (D-it) on the electrical peak and the dielectric properties were investigated in detail. All of the dielectric properties such as the real and imaginary parts of dielectric constants (epsilon', epsilon''), electric moduli (M' and M), loss tangent (tan delta), and sigma(ac), values were found to be strong functions of temperature and applied bias voltage. These changes become considerably high especially in the depletion region. In addition, the voltage dependent Rs values were obtained and they increased with decreasing temperature C-V-T and G/omega-V-T measurements confirmed that R-s, D-it, and PVC+TCNQ layers are very important parameters that strongly influence both dielectric properties and sigma(ac) of structures. (C) 2014 Elsevier Ltd. All rights reserved.
dc.identifier.doi10.1016/j.mssp.2014.03.051
dc.identifier.endpage42
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-84911368611
dc.identifier.scopusqualityQ1
dc.identifier.startpage37
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2014.03.051
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3472
dc.identifier.volume28
dc.identifier.wosWOS:000345645000007
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science In Semiconductor Processing
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20251023
dc.subjectAu/PVC plus TCNQ/p-Si structures; Dielectric properties and ac conductivity; Electrical properties; Temperature and voltage dependences; Series resistance; Arrhenius plot
dc.titleTemperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC plus TCNQ/p-Si structures
dc.title.alternativeTemperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC+TCNQ/p-Si structures
dc.typeConference Object

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