The role of molybdenum trioxide in the change of electrical properties of Cr/MoO3/n-Si heterojunction and electrical characterization of this device depending on temperature

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dc.authorid0000-0003-0607-648Xen_US
dc.contributor.authorÇaldıran, Zakir
dc.contributor.authorTaşyürek, Lütfi Bilal
dc.date.accessioned2021-05-18T12:05:49Z
dc.date.available2021-05-18T12:05:49Z
dc.date.issued2021en_US
dc.departmentMTÖ Üniversitesi, Darende Meslek Yüksekokulu, Tıbbi Hizmetler ve Teknikler Bölümüen_US
dc.description.abstractIn this study, the molybdenum trioxide as a chemical compound with the formula MoO3 was coated between chromium (Cr) metal and n-type semiconductor (n-Si) by thermal evaporation. Using this method, Cr/MoO3/n-Si/Al heterojunction was obtained. With the thermionic emission (TE) theory, the ideality factor (n) for the reference Cr/n-Si/Al metal-semiconductor (MS) device was calculated as 1.88 and the barrier height (?b) was calculated as 0.59 eV. On the other hand, the ideality factor for six (D1-D6) Cr/MoO3/n-Si/Al heterojunction devices obtained with MoO3 nanopowder was calculated between 1.61 and 1.69, and the barrier height was calculated as 0.69 eV, respectively. According to these results, MoO3 layer made the device's current transmission mechanism behave ideally and increased the barrier height. Current-voltage (I–V) measurements depending on temperature were performed for D1 named Cr/MoO3/n-Si/Al device, which provided the best results. Electrical parameters, such as n, ?b and series resistance (Rs), by the TE method, Cheung and Norde functions were calculated using I–V characteristic taken from the 100 K–400 K temperature range. According to the results obtained, the values of n and Rs decreased and the barrier height increased in the heterojunction device due to the increase in the temperature value. When the results were evaluated, it was observed that the current transmission of the Cr/MoO3/n-Si/Al device was compatible with the applied temperature and a significant and regular change in the temperature-dependent I–V characteristics. This finding suggests that Cr/MoO3/n-Si/Al heterojunction obtained with MoO3 is a good option for thermal sensitivity applications.en_US
dc.identifier.citationÇaldıran, Zakir, and Lütfi Bilal Taşyürek. 2021. "The role of molybdenum trioxide in the change of electrical properties of Cr/MoO3/n-Si heterojunction and electrical characterization of this device depending on temperature". Sensors and Actuators A: Physical. 112765.en_US
dc.identifier.doi10.1016/j.sna.2021.112765
dc.identifier.issn0924-4247en_US
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-85105044704en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.sna.2021.112765
dc.identifier.urihttps://hdl.handle.net/20.500.12899/136
dc.identifier.volume328en_US
dc.identifier.wosWOS:000656698400009en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorTaşyürek, Lütfi Bilal
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofSensors and Actuators A: Physicalen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHeterojunction deviceen_US
dc.subjectMolybdenum trioxideen_US
dc.subjectThermal sensitivityen_US
dc.subjectTransition metal oxideen_US
dc.titleThe role of molybdenum trioxide in the change of electrical properties of Cr/MoO3/n-Si heterojunction and electrical characterization of this device depending on temperatureen_US
dc.typeArticleen_US

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