Temperature and Voltage Effect on Barrier Height and Ideality Factor in Au/PVC plus TCNQ/p-Si Structures
Küçük Resim Yok
Tarih
2014
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Wiley-Hindawi
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The forward bias current conduction mechanisms of Au/PVC + TCNQ/p-Si structures have been investigated in a wide temperature range of 120-420K for various applied bias voltage. The analysis of the main electrical parameters such as zero-bias barrier height (BH) (phi(Bo)), ideality factor (n), and interface states (N-ss) was found strongly dependent on temperature and voltage. The obtained results show that, while phi(Bo) increases, n decreases with increasing temperature. The plot of phi(app) versus q/2kT was drawn to show a Gaussian distribution (GD) of the BHs, and this plot shows two distinct linear regions. The phi(Bo) and standard deviation (sigma(s)) values were found from the slope and intercept of these plots for two regions as 1.16 eV and 0.161V for the first region and 0.71 eV and 0.093V for the second region, respectively. Such behavior is typical of a double GD (DGD) of the BHs due to the BH inhomogeneities at the metal-semiconductor interface. The slope and intercept of the modified (ln(I-0/T-2) - q(2)sigma(2)(0)/2k(2)T(2)) versus q/kT plot gives the and phi(Bo) and effective Richardson constant (A*) as 1.16 and 0.76 eV and 36.7 and 83.8 A/cm(2)K(2), respectively. The value of the A* (36.7 A/cm(2) K-2) is very close to the theoretical value of 32 A/cm(2) K-2 for p-Si. In addition, to interrupt the voltage-dependent activation energy, the ln(I-s/T-2) versus q/kT plot was drawn in the voltage range of 0-0.3V in 0.05V steps. All of experimental results confirmed that the BH or E-a values depend on the temperature as well as bias voltages.
Açıklama
Anahtar Kelimeler
Interfaces; Metal-polymer complexes; Thin films
Kaynak
Advances In Polymer Technology
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
33
