Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method

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dc.authoridSEVGILI, OMER/0000-0003-1740-1444;
dc.contributor.authorKaya, A.
dc.contributor.authorSevgili, O.
dc.contributor.authorAltindal, S.
dc.date.accessioned2025-10-24T18:09:24Z
dc.date.available2025-10-24T18:09:24Z
dc.date.issued2014
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractAu/n-type 4H-SiC diodes were fabricated and their electrical characteristics have been investigated by using the capacitance/conductance-voltage-frequency (C-V -f and G/w - V f) measurements method at room temperature. The main parameters such as the doping atoms (N-D), diffusion potential (V-D) and barrier height (Phi(B)(C-V)) values were obtained from the reverse bias C-2 - V plots for each frequency. C and G/omega values decrease with increasing frequency as almost exponential for each voltage and these changes in C and G/omega are considerably high at low frequencies due to the contribution of surface states (N-ss) to the measured C and G/omega. The resistivity (Ri) versus V plots were also obtained by using the C and G data and they exhibit an anomalous peak which is corresponding to the depletion region at each frequencies and its magnitude decreases with increasing frequency. The energy density distribution of N-ss and their relaxation time (tau) were obtained from the conductance method and they range from 1.53 x 10(14) eV(-1) cm(-2) to 1.03 x 10(14) eV(-1) cm(-2) and 1.29 x 10(-4) s to 3.35 x 10(-5) s, respectively, in the energy range of (0.585 - E-v) - (0.899 - E-v) eV. The voltage dependent of N-ss was also obtained from C-HF - C-LF method. The obtained value of N-ss is about 10(14) eV(-1) cm(-2) order and these values are suitable for an electronic device.
dc.identifier.doi10.1142/S0217979214501045
dc.identifier.issn0217-9792
dc.identifier.issn1793-6578
dc.identifier.issue17
dc.identifier.scopus2-s2.0-84901853786
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1142/S0217979214501045
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3631
dc.identifier.volume28
dc.identifier.wosWOS:000336939000003
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWorld Scientific Publ Co Pte Ltd
dc.relation.ispartofInternational Journal Of Modern Physics B
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20251023
dc.subjectConductance method; Au/n-type 4H-SiC SBDs; energy density distribution of surface states; relaxation time and capture cross-section
dc.titleEnergy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method
dc.typeArticle

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