Current-conduction mechanism in Au/n-4H-SiC Schottky barrier diodes

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dc.authoridSEVGILI, OMER/0000-0003-1740-1444;
dc.contributor.authorKaya, A.
dc.contributor.authorSevgili, O.
dc.contributor.authorAltindal, S.
dc.contributor.authorOzturk, M. K.
dc.date.accessioned2025-10-24T18:10:28Z
dc.date.available2025-10-24T18:10:28Z
dc.date.issued2015
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractAu/n-4H-SiC Schottky barrier diodes (SBDs) were fabricated and their temperature and voltage dependence of saturation current (I-o), ideality factor (n), bather height (Phi(bo)), series and shunt resistances (R-s, R-th) values were obtained by using current-voltage (I-V) measurements in the temperature range 110-400 K. The values of I-0, n and Phi(bo) were found as 3.00x10(-14)A, 3.41 and 0.39. eV at 110 K and 7.75x10(-7)A, 1.64 and 0.90 eV at 400 K, respectively. The Phi(bo)-q/2kT plot was drawn to obtain an evidence of a Gaussian distribution (GD) of the bather heights (BHs). The mean BH ((Phi) over bar (bo)) and standard deviation (sigma(o)) values have been extracted from the intercept and slope of this plot is as 1.089 eV and 0.127 V, respectively. The (Phi) over bar (bo) and Richardson constant (A*) values were obtained from the modified Ln(I-o/T-2) -(q(2)sigma(2)(s)/2k(2)T(2)) versus q/kT plot as ;1.093 eV and 160.6 A.cm(-2)K(-2) which can be considered as close to the theoretical value 146 A.cm(-2)K(-2), respectively. Voltage dependent activation energy (E-a) value was also obtained from the In(I-o/T-2)-q1/kT and In(I-o/T-2)-qI/nkT plots in the voltage range 0.05-0.50 V with 0.05 V steps and it is found that it decreases with increasing voltage. The temperature dependence of I-V characteristics in Au/n-4H-SiC diodes can be successfully explained on the basis of a TB mechanism with GD of the BHs.
dc.identifier.endpage65
dc.identifier.issn0019-5596
dc.identifier.issn0975-1041
dc.identifier.issue1
dc.identifier.scopus2-s2.0-84920611867
dc.identifier.scopusqualityQ3
dc.identifier.startpage56
dc.identifier.urihttps://hdl.handle.net/20.500.12899/4177
dc.identifier.volume53
dc.identifier.wosWOS:000348620900008
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherNatl Inst Science Communication-Niscair
dc.relation.ispartofIndian Journal Of Pure & Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20251023
dc.subjectAu/n-4H-SiC diodes; Ideality factor; Bather inhomogeneities; Gaussian distribubition; Bather heights
dc.titleCurrent-conduction mechanism in Au/n-4H-SiC Schottky barrier diodes
dc.typeArticle

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