On double exponential forward bias current-voltage (I-V) characteristics of Au/Ca3Co4Ga0.001Ox/n-Si/Au (MIS) type structures in temperature range of 80-340 K

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dc.authoridKocyigit, Serhat/0000-0003-0172-6180;
dc.contributor.authorMaril, E.
dc.contributor.authorAltindal, S.
dc.contributor.authorKaya, A.
dc.contributor.authorKocyigit, S.
dc.contributor.authorUslu, I.
dc.date.accessioned2025-10-24T18:09:14Z
dc.date.available2025-10-24T18:09:14Z
dc.date.issued2015
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractCurrent transport mechanisms (CTMs) of Au/Ca3Co4Ga0.001Ox/n-Si/Au (MIS) type structures were investigated using current-voltage (I-V) characteristics in the temperature range of 80-340K. Semilogarithmic I-V plots show two linear regions corresponding to low (0.075-0.250V) and moderate (0.27-0.70V) biases, respectively. Zero-bias barrier height (phi(B0)) was observed to increase with increase in the temperature, whereas opposite behaviour was observed for ideality factor (n). phi(B0) and (n(-1)-1) vesus q/2kT and phi(B0) versus n plots were drawn to get an evidence of Gaussian distribution (GD) of the barrier heights. These plots, too, show two linear regions corresponding to low (80-160K) and high (200-340K) temperature ranges (LTR and HTR), respectively. Mean value of barrier height ( [GRAPHICS] (B0)) and standard deviation (sigma(s)) were extracted from the intercept and slope of phi(B0) versus q/2kT plots for two linear regions as 0.382eV, 0.0060V for LTR and 0.850eV, 0.135V for HTR at low biases and 0.364eV, 0.0059V for LTR and 0.806eV, 0.132V for HTR at high biases, respectively. [GRAPHICS] (B0) and Richardson constant (A*) values were also obtained from the intercept and slope of the modified Richardson (Ln(I-o/T-2)-(q(2)sigma(2)(s)/2k(2)T(2)) versus q/kT) plots as 131.81 Acm(-2)K(-2), 0.381eV for LTR and 129.35 Acm(-2)K(-2), 0. 854eV for HTR at low biases and 148.01 Acm(-2)K(-2), 0.377eV for LTR and 143.77 Acm(-2)K(-2), 0.812eV for HTR at high biases, respectively. In conclusion, CTM in the structure can be successfully explained in terms of thermionic emission theory with the double GD of barrier heights.
dc.identifier.doi10.1080/14786435.2015.1009517
dc.identifier.endpage1068
dc.identifier.issn1478-6435
dc.identifier.issn1478-6443
dc.identifier.issue10
dc.identifier.scopus2-s2.0-84926419598
dc.identifier.scopusqualityQ3
dc.identifier.startpage1049
dc.identifier.urihttps://doi.org/10.1080/14786435.2015.1009517
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3545
dc.identifier.volume95
dc.identifier.wosWOS:000352058900002
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherTaylor & Francis Ltd
dc.relation.ispartofPhilosophical Magazine
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20251023
dc.subjectAu/Ca3Co4Ga0.001Ox/n-Si/Au structures; temperature and voltage dependent; modified richardson plot; double Gaussian distribution
dc.titleOn double exponential forward bias current-voltage (I-V) characteristics of Au/Ca3Co4Ga0.001Ox/n-Si/Au (MIS) type structures in temperature range of 80-340 K
dc.typeArticle

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