On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC plus TCNQ)/p-Si structures

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dc.contributor.authorYucedag, I.
dc.contributor.authorKaya, A.
dc.contributor.authorAltindal, S.
dc.date.accessioned2025-10-24T18:09:24Z
dc.date.available2025-10-24T18:09:24Z
dc.date.issued2014
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractThe dielectric properties, electric modulus and ac electrical conductivity (sigma(ac)) of Al/Co-doped (PVC + TCNQ)/p-Si structures have been investigated in the wide frequency and voltage range of 0.5 kHz-3 MHz and (-4 V)-( 9 V), respectively, using the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at room temperature. The real and imaginary parts of dielectric constant (epsilon ', epsilon ''), loss tangent (tan delta), sigma(ac) and the real and imaginary parts of electric modulus (M ', M '') were found strongly function of frequency and applied voltage especially at low frequencies. The epsilon '-V plot shows an anomalous peak in the forward bias region due to the series resistance (R-s), surface states (N-ss) and interfacial layer (PVC + TCNQ) effects for each frequency and then it goes to negative values known as negative dielectric constant (NDC) at low frequencies (f <= 70 kHz). Such observation of NDC is important result because it implies that an increment of bias voltage produces a decrease in the charge on the electrodes. The amount of negativity epsilon ' value increases with decreasing frequency and this decrement in the NDC corresponds to the increment in the epsilon ''.
dc.identifier.doi10.1142/S0217979214501537
dc.identifier.issn0217-9792
dc.identifier.issn1793-6578
dc.identifier.issue23
dc.identifier.scopus2-s2.0-84904554636
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1142/S0217979214501537
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3632
dc.identifier.volume28
dc.identifier.wosWOS:000340097400004
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWorld Scientific Publ Co Pte Ltd
dc.relation.ispartofInternational Journal Of Modern Physics B
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20251023
dc.subjectAl/Co-doped (PVC | TCNQ)/p-Si structures; negative dielectric constant; dielectric properties; electric modulus; ac electrical conductivity; frequency and voltage dependent
dc.titleOn the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC plus TCNQ)/p-Si structures
dc.title.alternativeOn the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC + TCNQ)/p-Si structures
dc.typeArticle

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