The effect of Mo-doped PVC plus TCNQ interfacial layer on the electrical properties of Au/PVC plus TCNQ/p-Si structures at room temperature

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dc.contributor.authorDemirezen, S.
dc.contributor.authorKaya, A.
dc.contributor.authorVural, O.
dc.contributor.authorAltindal, S.
dc.date.accessioned2025-10-24T18:09:07Z
dc.date.available2025-10-24T18:09:07Z
dc.date.issued2015
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractThe effect of Mo-doped and undoped PVC+TCNQ interfacial layer on electrical characteristics of a Au/PVC+TCNQ/p-Si structure was investigated using current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at room temperature. The energy dependent interface states density (N-ss) was obtained from the forward bias I-V data by taking into account voltage dependent effective barrier height (Phi(e)) for two diodes,. i.e. with and without Mo doping. The voltage dependent resistance (R-i) of structures was also obtained using Ohm's law and the method of Nicollian and Brews for the diodes. In order to eliminate the effect of series resistance (R-s), C and G/omega at high frequency values were corrected. N-ss and R-s values were compared between the diodes and experimental results showed that N-ss and R-s values of the Mo-doped PVC+TCNQ structure are considerably lower than those of the undoped PVC+TCNQ structure. The other important parameters such as ideality factor (n), reverse saturation current (I-s), zero-bias barrier heights (Phi(B0)) and R-s were obtained from forward bias I-V data by using I-V, Cheung and Norde methods. Experimental results confirmed that the Mo-doped (PVC+TCNQ) layer considerably improved the performance of the Au/PVC+TCNQ/p-Si structure. (C) 2015 Elsevier Ltd. All rights reserved.
dc.identifier.doi10.1016/j.mssp.2015.01.050
dc.identifier.endpage148
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-84923250658
dc.identifier.scopusqualityQ1
dc.identifier.startpage140
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2015.01.050
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3474
dc.identifier.volume33
dc.identifier.wosWOS:000351652400020
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science In Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20251023
dc.subjectMo-doped (PVC plus TCNQ) interfacial layer; Energy density distribution profile of interface states; Effect of Mo-doping on electrical characteristics; Schottky barrier diodes (SBDs)
dc.titleThe effect of Mo-doped PVC plus TCNQ interfacial layer on the electrical properties of Au/PVC plus TCNQ/p-Si structures at room temperature
dc.title.alternativeThe effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature
dc.typeArticle

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