The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature

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dc.contributor.authorKaya, A.
dc.contributor.authorMaril, E.
dc.contributor.authorAltindal, S.
dc.contributor.authorUslu, I.
dc.date.accessioned2025-10-24T18:09:06Z
dc.date.available2025-10-24T18:09:06Z
dc.date.issued2016
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractTo investigate the effect of 2% graphene cobalt (GC)-doped (Ca3Co4Ga0.001Ox) interfacial layer on the main electrical parameters, Au/n-Si (MS) Schottky barrier diodes (SBDs) were fabricated with and without this inter-facial layer. Using forward and reverse bias current-voltage (I-V) measurements, selected electrical parameters of these diodes were obtained and compared at room temperature. The energy density distribution profiles of the surface states (N) were obtained from the forward-bias I-V data by taking into account the voltage-dependent effective barrier height (be) and ideality factor (n(V)). The value of Ns, for the MPS-type diode is one order of magnitude lower than that of the MS diode. These results indicated that the 2% GC-doped (Ca(3)Co(4)Oa(0.001)O(x)) interfacial layer prevents reaction and inter-diffusion between Au and n-Si as well as passivating the active dangling bonds at the semiconductor surface. In addition, the voltage-dependent profile of the resistance (11,) was also obtained for the two diodes from the I-V data using Ohm's law. In both the MS- and MPS-type diodes, an apparent exponential increase in hl was observed from the mid-gap toward the bottom of the E. The experimental results show that the existence of Nss, Rs, and the interfacial layer has a great effect on the electrical characteristics of these structures. The value of the depletion layer width was obtained from C-V measurements at 300 kHz for the two diodes. The obtained results show that the GC-doped (Ca3Co4Ga0.001Ox) interfacial layer considerably enhances the diode performance. (C) 2015 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.mee.2015.10.012
dc.identifier.endpage171
dc.identifier.issn0167-9317
dc.identifier.issn1873-5568
dc.identifier.scopus2-s2.0-84945905673
dc.identifier.scopusqualityQ2
dc.identifier.startpage166
dc.identifier.urihttps://doi.org/10.1016/j.mee.2015.10.012
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3467
dc.identifier.volume149
dc.identifier.wosWOS:000367420200029
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20251023
dc.subjectAnalysis and comparison of an Au/n-Si (MS) diode and an Au/2% GC-doped; (Ca3Co4Ga0.001Ox)/n-Si type diode; Energy density distribution profile of surface states; Voltage-dependent profile resistance
dc.titleThe comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature
dc.typeArticle

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