The light detection performance of Al/VNPB/n-Si Schottky photodetectors for a wide-range spectrum

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dc.contributor.authorYildiz, Dilber Esra
dc.contributor.authorManfo, Theodore Azemtsop
dc.contributor.authorHussaini, Ali Akbar
dc.contributor.authorYildirim, Murat
dc.contributor.authorGunduz, Bayram
dc.date.accessioned2026-06-19T06:39:45Z
dc.date.available2026-06-19T06:39:45Z
dc.date.issued2026
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractA novel organic-inorganic Schottky photodetector incorporating a N4, N4 '-di(Naphthalen-1-yl)-N4, N4 '-bis(4-vinylphenyl)biphenyl-4,4 '-diamine (VNPB) thin film interlayer was fabricated and systematically characterized. The Al/VNPB/n-Si Schottky photodetectors were investigated using UV-Vis spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM), revealing strong visible light absorption and high crystallinity. Electrical measurements under varying illumination intensities demonstrated enhanced rectification and significant photocurrent generation, attributed to thermionic emission and efficient photocarrier formation. Under solar illumination (20-100 mW/cm(2)), the device demonstrated strong photocurrent generation, high photosensitivity (22.05-80.58), responsivity up to 2.18 A/W, and detectivity values on the order of 10(10) Jones, confirming efficient low-noise photodetection. The device exhibited high photosensitivity, responsivity, and specific detectivity across a broad spectral range (351-1600 nm), with peak performance at 600 nm, where a maximum responsivity of 0.0366 A/W, an external quantum efficiency of similar to 75%, and a detectivity of 6.11 x 10(9) Jones were achieved. In addition, strong near-infrared performance was observed at 1000 nm, with a photosensitivity of 4.85 and a detectivity of 5.76 x 10(9) Jones. Compared to oxide-based photodetectors, the Al/VNPB/n-Si architecture demonstrated superior optoelectronic performance, positioning VNPB as a promising interfacial material for next-generation photodetection technologies.
dc.identifier.doi10.1016/j.optmat.2026.118130
dc.identifier.issn0925-3467
dc.identifier.issn1873-1252
dc.identifier.urihttps://doi.org/10.1016/j.optmat.2026.118130
dc.identifier.urihttps://hdl.handle.net/20.500.12899/5760
dc.identifier.volume176
dc.identifier.wosWOS:001758929700001
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofOptical Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20260612
dc.subjectVnpb
dc.subjectSchottky Photodetectors
dc.subjectPhotosensitivity
dc.subjectSpecific Detectivity
dc.titleThe light detection performance of Al/VNPB/n-Si Schottky photodetectors for a wide-range spectrum
dc.typeArticle

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