The Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistor

Abstract

In this paper, various physical device simulation of pseudomorphic High Electron Mobility Transistors are realized to show the effect of aligning parameter on scattering parameters. S parameters are complex numbers, so both real and imaginer part of scattering parameters are plotted concerning frequency at different align parameters. In all figures, a brief explanation about the change of the S parameter for frequency and align parameter is provided. The effect of the align parameter, which has a value of 0.4 differs from other align parameter values such as 0.45, 0.5, 0.55 and 0.6 on scattering parameters of the transistor structure.