The Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistor
Künye
Satılmış, G. (2020). The Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistor . NATURENGS , 1 (2) , 89-96 .Özet
In this paper, various physical device simulation of pseudomorphic High Electron Mobility
Transistors are realized to show the effect of aligning parameter on scattering parameters. S parameters are
complex numbers, so both real and imaginer part of scattering parameters are plotted concerning frequency at
different align parameters. In all figures, a brief explanation about the change of the S parameter for frequency and
align parameter is provided. The effect of the align parameter, which has a value of 0.4 differs from other align
parameter values such as 0.45, 0.5, 0.55 and 0.6 on scattering parameters of the transistor structure.
Kaynak
NATURENGSCilt
1Sayı
2Bağlantı
https://dergipark.org.tr/tr/pub/naturengs/issue/59260/836722https://hdl.handle.net/20.500.12899/1016