Satılmış,Gökhan2022-04-202022-04-202020Satılmış, G. (2020). The Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistor . NATURENGS , 1 (2) , 89-96 .2717-8013https://dergipark.org.tr/tr/pub/naturengs/issue/59260/836722https://hdl.handle.net/20.500.12899/1016In this paper, various physical device simulation of pseudomorphic High Electron Mobility Transistors are realized to show the effect of aligning parameter on scattering parameters. S parameters are complex numbers, so both real and imaginer part of scattering parameters are plotted concerning frequency at different align parameters. In all figures, a brief explanation about the change of the S parameter for frequency and align parameter is provided. The effect of the align parameter, which has a value of 0.4 differs from other align parameter values such as 0.45, 0.5, 0.55 and 0.6 on scattering parameters of the transistor structure.eninfo:eu-repo/semantics/openAccessPHMETScattering parametersAlign ParameterDevice SimulationArticle10.46572/nat.2020.19128996