Yucedag, I.Kaya, A.Tecimer, H.Altindal, S.2025-10-242025-10-2420141369-80011873-4081https://doi.org/10.1016/j.mssp.2014.03.051https://hdl.handle.net/20.500.12899/3472International Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEYDielectric properties and ac conductivity (sigma(ac)) of Au/PVC+TCNQ/p-Si structures have been investigated in the wide temperature range of 80-420 K using capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at 1 MlHz. It has been found that the forward bias C-V plots exhibit a distinct peak especially at a high temperature. Effects of the series resistance (R-s), interfacial PVC+TCNQ layer and the density distribution of interfaces'traps (D-it) on the electrical peak and the dielectric properties were investigated in detail. All of the dielectric properties such as the real and imaginary parts of dielectric constants (epsilon', epsilon''), electric moduli (M' and M), loss tangent (tan delta), and sigma(ac), values were found to be strong functions of temperature and applied bias voltage. These changes become considerably high especially in the depletion region. In addition, the voltage dependent Rs values were obtained and they increased with decreasing temperature C-V-T and G/omega-V-T measurements confirmed that R-s, D-it, and PVC+TCNQ layers are very important parameters that strongly influence both dielectric properties and sigma(ac) of structures. (C) 2014 Elsevier Ltd. All rights reserved.eninfo:eu-repo/semantics/openAccessAu/PVC plus TCNQ/p-Si structures; Dielectric properties and ac conductivity; Electrical properties; Temperature and voltage dependences; Series resistance; Arrhenius plotConference Object10.1016/j.mssp.2014.03.0512837422-s2.0-84911368611Q1WOS:000345645000007Q2