Haider, AliDeminskyi, PetroYilmaz, MehmetElmabruk, KholoudYilmaz, IbrahimBiyikli, Necmi2025-10-242025-10-2420182050-75262050-7534https://doi.org/10.1039/c8tc01165fhttps://hdl.handle.net/20.500.12899/3517In this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays (HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated low-temperature plasma-assisted atomic layer deposition (PA-ALD). III-Nitride HNCs have been characterized for their structural, chemical, surface, and optical properties. The material properties of nanostructured III-nitride materials have been compared with the thin-film counterparts which were also grown using PA-ALD. Our results revealed that long-range ordered arrays of III nitride HNCs were successfully integrated on Si substrates and possess hexagonal polycrystalline wurtzite crystalline structure. Such long-range ordered wafer-scale III-nitride nanostructures might be potentially used in piezotronic sensing, energy harvesting, resistive memory, flexible and wearable electronics, III-nitride photovoltaics, and (photo)catalysis.eninfo:eu-repo/semantics/openAccessAligned Inn Nanorods; Gan Nanowires; Thin-Films; High-Density; Growth; Epitaxy; Aln; Nanostructures; Nanoparticles; FabricationArticle10.1039/c8tc01165f624647164822-s2.0-85049155811Q1WOS:000436030200016Q1