The Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistor

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dc.authorid0000-0002-8188-7242en_US
dc.contributor.authorSatılmış,Gökhan
dc.date.accessioned2022-04-20T08:13:36Z
dc.date.available2022-04-20T08:13:36Z
dc.date.issued2020en_US
dc.departmentMTÖ Üniversitesien_US
dc.description.abstractIn this paper, various physical device simulation of pseudomorphic High Electron Mobility Transistors are realized to show the effect of aligning parameter on scattering parameters. S parameters are complex numbers, so both real and imaginer part of scattering parameters are plotted concerning frequency at different align parameters. In all figures, a brief explanation about the change of the S parameter for frequency and align parameter is provided. The effect of the align parameter, which has a value of 0.4 differs from other align parameter values such as 0.45, 0.5, 0.55 and 0.6 on scattering parameters of the transistor structure.en_US
dc.identifier.citationSatılmış, G. (2020). The Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistor . NATURENGS , 1 (2) , 89-96 .en_US
dc.identifier.doi10.46572/nat.2020.19
dc.identifier.endpage96en_US
dc.identifier.issn2717-8013en_US
dc.identifier.issue2en_US
dc.identifier.startpage89en_US
dc.identifier.urihttps://dergipark.org.tr/tr/pub/naturengs/issue/59260/836722
dc.identifier.urihttps://hdl.handle.net/20.500.12899/1016
dc.identifier.volume1en_US
dc.language.isoenen_US
dc.publisherMalatya Turgut Özal Üniversitesien_US
dc.relation.ispartofNATURENGSen_US
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Başka Kurum Yazarıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectPHMETen_US
dc.subjectScattering parametersen_US
dc.subjectAlign Parameteren_US
dc.subjectDevice Simulationen_US
dc.titleThe Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistoren_US
dc.typeArticleen_US

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