Synthesis of nickel nanoparticles-deposited strontium titanate nanocubes (Ni-STO) and heterojunction electrical applications over a wide temperature range

Abstract

In the present study, the structural properties of nickel nanoparticles-deposited strontium titanate nanocubes (Ni-STO) were examined by taking XRD, ICP-MS, TEM and SEM images. Temperature-dependent capacitance–voltage (C-V) and current–voltage (I-V) measurements were made for the electrical characterization of the Ni/Ni-STO/n-Si heterojunction devices produced. As the temperature increases from 80 K to 400 K, the ideality factor (n) decreases from 2.30 to 1.02 while barrier height (BH) increases from 0.27 eV to 0.80 eV. In the heterojunction device between Ni-STO and n-type Si, electrons can be captured at the Schottky barrier interface and recombinations can be reduced. Devices produced with Ni-STO material had a positive effect on performance compared to the devices produced with STO in previous studies. The electrical parameters obtained give compatible results as a function of temperature. Metal deposited STOs are potential candidates for temperature-dependent sensors and electrical devices.